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RSS120N03 Datasheet

  • RSS120N03

  • Switching (30V, 12A)

  • 4頁(yè)

  • ROHM

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RSS120N03
Transistors
Switching (30V, 12A)
RSS120N03
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
External dimensions
(Unit : mm)
SOP8
5.0鹵0.2
(5)
(8)
6.0鹵0.3
3.9鹵0.15
Max.1.75
Applications
Power switching, DC / DC converter.
1.5鹵0.1
0.15
Structure
Silicon N-channel
MOS FET
1.27
0.4鹵0.1
0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipatino
Channel temperature
Strage temperature
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
MOUNTED ON A CERAMIC BOARD
Equivalent circuit
Limits
30
20
鹵12
鹵48
1.6
6.4
2
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W
擄C
擄C
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
鈭?
鈭?
鈭?
(1)
鈭?
鈭?
0.5鹵0.1
(1)
(4)
0.2鹵0.1
(1) (2) (3) (4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
(2)
(3)
(4)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
鈭桝
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal resistance
(Ta=25擄C)
Parameter
Channel to ambient
鈭桵OUNTED
ON A CERAMIC BOARD
Symbol
Rth (ch-a)
Limits
62.5
Unit
擄C
/ W
鈭?/div>
1/3

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