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RSS100N03 Datasheet

  • RSS100N03

  • Switching (30V, 【10A)

  • 4頁

  • ROHM

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RSS100N03
Transistor
Switching (30V, 鹵10A)
RSS100N03
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
External dimensions
(Unit : mm)
SOP8
(8)
5.0鹵0.2
(5)
6.0鹵0.3
3.9鹵0.15
Max.1.75
1.5鹵0.1
0.15
Applications
Power switching, DC/DC converter.
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
1.27
0.4鹵0.1
0.1
Each lead has same dimensions
Structure
鈥ilicon
N-channel MOS FET
Equivalent circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
鈭?
鈭?
(1) (2) (3) (4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
(1)
(2)
(3)
(4)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
鈭桝
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipatino
Channel temperature
Strage temperature
鈭?/div>
1 Pw鈮?0碌s, Duty cycle鈮?%
鈭?/div>
2 Mounted on a ceramic board.
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Limits
30
20
鹵10
鹵40
1.6
6.4
2
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W
擄C
擄C
鈭?/div>
1
鈭?/div>
1
鈭?/div>
2
0.5鹵0.1
(1)
(4)
0.2鹵0.1
1/3

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