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RQG1004UPAQL Datasheet

  • RQG1004UPAQL

  • NPN Silicon Germanium Transistor High Frequency Low Noise Am...

  • 19頁

  • RENESAS

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RQG1004UPAQL
NPN Silicon Germanium Transistor
High Frequency Low Noise Amplifier
REJ03G1552-0100
Rev.1.00
Jul 20, 2007
Features
鈥?/div>
Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc.
鈥?/div>
High gain and low noise.
MSG = 25 dB typ. , NF = 0.65 dB typ. at V
CE
= 2 V, I
C
= 5 mA, f = 0.9 GHz
MSG = 22 dB typ. , NF = 0.75 dB typ. at V
CE
= 2 V, I
C
= 5 mA, f = 1.8 GHz
MSG = 21 dB typ. , NF = 0.85 dB typ. at V
CE
= 2 V, I
C
= 5 mA, f = 2.4 GHz
MSG = 15 dB typ. , NF = 1.3 dB typ. at V
CE
= 2 V, I
C
= 10 mA, f = 5.8 GHz
鈥?/div>
High transition frequency
f
T
= 41 GHz typ.
鈥?/div>
Small and low height package
MFPAK-4 (1.4 x 0.8 x 0.55(max) mm)
Outline
RENESAS package code: PUSF0004ZA-A
(Package name: MFPAK-4)
2
3
1
4
1.Emitter
2.Collector
3.Emitter
4.Base
Note:
Marking is 鈥淯P-鈥?
Absolute Maximum Ratings
(Ta = 25擄C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Pc
Tj
Tstg
Ratings
8
3.5
1.2
35
80
200
note1
150
鈥?5 to +150
Unit
V
V
V
mA
mW
mW
擄C
擄C
Notes: 1. Value on PCB (FR-4 : 40 x 40 x 1.6mm double side)
REJ03G1552-0100 Rev.1.00 Jul 20, 2007
Page 1 of 18

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