鈮?/div>
1.2:1.
2. Derived mathematically from one or more of the following directly measured parameters: f
c
, IL, 3 dB bandwidth, f
c
vs. T
c
, and C
o
.
3. Turnover temperature, T
o
, is the temperature of maximum (or turnover) frequency, f
o
. The nominal frequency at any case temperature, T
c
,
may be calculated from: f = f
o
[ 1 - FTC ( T
o
- T
c
)
2
]. (Note that
oscillator
T
o
is typically 20擄C less than specified
resonator
T
o
.)
4. Frequency aging is the change in f
c
with time and is specified at +65擄C or less. Aging may exceed the specification for prolonged tempera-
tures above +65擄C. Typically, aging is greatest the first year after manufacture, decreasing in subsequent years.
5. This equivalent RLC model approximates resonator performance near the resonant frequency and is provided for reference only. C
o
is the
measured static (nonmotional) capacitance between pin 1 and ground or pin 2 and ground and includes case parasitic capacitance.
6. The design, manufacturing process, and specifications of this device are subject to change without notice.
7. One or more of the following U. S. Patents apply: 4,454,488 and 4,616,197. RFM廬 is a registered trademark of RF Monolithics, Inc.
8. Equipment utilitizing this device typically requires emissions testing and government approval, which is the responsibility of the equipment
manufacturer.
9. CAUTION: ELECTROSTATIC SENSITIVE DEVICE. Observe precautions for handling.
RP1103.CHP-A-01-122094LHAC
脙
RPBACK.CHP
漏 1994
RF Monolithics, Inc.
1
