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RO2180B Datasheet

  • RO2180B

  • Analog IC

  • 2頁

  • ETC

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RO2180B
鈥?/div>
鈥?/div>
鈥?/div>
Very Low Series Resistance
Quartz Stability
Surface-Mount, Solder Seal Package with 4.8 x 5.2 mm Footprint
The RO2180B is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount ceramic case.
It provides reliable, fundamental-mode, quartz frequency stabilization.
433.92 MHz
SAW
Resonator
Absolute Maximum Ratings
Rating
CW RF Power Dissipation
DC Voltage Between Terminals (Observe ESD Precautions)
Case Temperature
Soldering Temperature
Electrical Characteristics
Frequency (+25 擄C)
Insertion Loss
Quality Factor
Temperature Stability
Unloaded Q
50
鈩?/div>
Loaded Q
Turnover Temperature
Turnover Frequency
Frequency Temperature Coefficient
Frequency Aging
RF Equivalent RLC Model
Absolute Value during the First Year
Motional Resistance
Motional Inductance
Motional Capacitance
Shunt Static Capacitance
Test Fixture Shunt Inductance
Lid Symbolization (in Addition to Lot and/or Date Code)
DC Insulation Resistance between Any Two Terminals
R
M
L
M
C
M
C
O
L
TEST
5, 6, 7, 9
2, 7
295
5, 6, 7, 9
Characteristic
Nominal Frequency
Tolerance from 433.92 MHz
Sym
f
C
Df
C
IL
Q
U
Q
L
T
O
f
O
FTC
|fA|
1
5
1.0
18.63
78.79
1.71
1.82
63.13
6, 7, 8
Notes
2, 3, 4, 5
2, 5, 6
5, 6, 7
Minimum
433.845
Typical
433.92
2
11,535
1,811
25
f
C+
16
0.032
鈮?0
ppm/擄C
2
ppm/yr
M鈩?/div>
鈩?/div>
碌H
fF
pF
nH
擄C
Maximum
433.995
鹵75
Units
MHz
kHz
dB
Value
+0
鹵30
-40 to +85
+250
Units
dBm
VDC
擄C
擄C
SM5248-8 Case
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
Frequency aging is the change in f
C
with time and is specified at +65擄C or less.
Aging may exceed the specification for prolonged temperatures above +65擄C.
Typically, aging is greatest the first year after manufacture, decreasing in subse-
quent years.
The frequency, f
C
, is measured at the minimum insertion loss point, IL
MIN
, with
the resonator in the 50
鈩?/div>
test system (VSWR
鈮?/div>
1.2:1). The shunt inductance,
L
TEST
, is tuned for parallel resonance with C
O
at f
C
. Typically, f
OSCILLATOR
or
f
TRANSMITTER
is approximately equal to the resonator f
C
.
One or more of the following United States patents apply: 4,454,488 and
4,616,197.
Typically, equipment utilizing this device requires emissions testing and govern-
ment approval, which is the responsibility of the equipment manufacturer.
Unless noted otherwise, case temperature T
C
= +25擄C鹵5擄C.
The design, manufacturing process, and specifications of this device are subject
to change without notice.
7.
8.
Derived mathematically from one or more of the following directly measured
parameters: f
C
, IL, 3 dB bandwidth, f
C
versus T
C
, and C
O
.
Turnover temperature, T
O
, is the temperature of maximum (or turnover) fre-
quency, f
O
. The nominal frequency at any case temperature, T
C
, may be calcu-
lated from: f = f
O
[1 - FTC (T
O
-T
C
)
2
]. Typically,
oscillator
T
O
is approximately
equal to the specified
resonator
T
O
.
This equivalent RLC model approximates resonator performance near the reso-
nant frequency and is provided for reference only. The capacitance C
O
is the
static (nonmotional) capacitance between the two terminals measured at low
frequency (10 MHz) with a capacitance meter. The measurement includes para-
sitic capacitance with 鈥淣C鈥?pads unconnected. Case parasitic capacitance is
approximately 0.05 pF. Transducer parallel capacitance can be calculated as:
C
P
鈮?/div>
C
O
- 0.05 pF.
2.
9.
3.
4.
5.
6.
RF Monolithics, Inc.
Phone: (972) 233-2903
Fax: (972) 387-9148
RFM Europe
Phone: 44 1963 251383
Fax: 44 1963 251510
漏1999 by RF Monolithics, Inc. The stylized RFM logo are registered trademarks of RF Monolithics, Inc.
E-mail: info@rfm.com
http://www.rfm.com
RO2180B-031000
Page 1 of 2

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