鈮?/div>
1.2:1). The shunt inductance, L
TEST
, is tuned for parallel resonance
with C
O
at f
C
.
One or more of the following United States patents apply:
4,454,488 and 4,616,197.
Typically, equipment utilizing this device requires emissions testing
and government approval, which is the responsibility of the equip-
ment manufacturer.
Unless noted otherwise, case temperature T
C
= +25擄C鹵2擄C.
The design, manufacturing process, and specifications of this
device are subject to change without notice.
Derived mathematically from one or more of the following directly
measured parameters: f
C
, IL, 3 dB bandwidth, f
C
versus T
C
, and
C
O
.
Turnover temperature, T
O
, is the temperature of maximum (or turn-
over) frequency, f
O
. The nominal frequency at any case tempera-
ture, T
C
, may be calculated from: f = f
O
[1 - FTC (T
O
-T
C
)
2
].
This equivalent RLC model approximates resonator performance
near the resonant frequency and is provided for reference only. The
capacitance C
O
is the static (nonmotional) capacitance between
Pin 1 and Pin 2 measured at low frequency (10 MHz) with a capaci-
tance meter. The measurement includes parasitic capacitance with
a floating case. Case parasitic capacitance is approximately
0.25pF. Transducer parallel capacitance can be calculated as C
P
鈮?/div>
C
O
- 0.25pF.
8.
3.
4.
5.
6.
7.
9.
RF Monolithics, Inc.
RO2150-102799
1
2
