鈮?/div>
1.2:1). The shunt
inductance, L
TEST
, is tuned for parallel resonance with C
O
at f
C
.
One or more of the following United States patents apply: 4,454,488 and
4,616,197.
Typically, equipment utilizing this device requires emissions testing and gov-
ernment approval, which is the responsibility of the equipment manufacturer.
Unless noted otherwise, case temperature T
C
= +25擄C鹵2擄C for all specifica-
tions.
The design, manufacturing process, and specifications of this device are sub-
ject to change without notice.
Derived mathematically from one or more of the following directly measured
parameters: f
C
, IL, 3 dB bandwidth, f
C
versus T
C
, and C
O
.
Turnover temperature, T
O
, is the temperature of maximum (or turnover) fre-
quency, f
O
. The nominal frequency at any case temperature, TC, may be cal-
9.
culated from: f = f
O
[1 - FTC (T
O
-T
C
)
2
].
This equivalent RLC model approximates resonator performance near the
resonant frequency and is provided for reference only. The capacitance C
O
is
the static (nonmotional) capacitance between the two terminals measured at
low frequency (10 MHz) with a capacitance meter. The measurement
includes parasitic capacitance with 鈥淣C鈥?pads unconnected. Case parasitic
capacitance is approximately 0.05pF. Transducer parallel capacitance can be
calculated as: C
P
鈮?/div>
C
O
- 0.05 pF.
3.
4.
5.
6.
7.
8.
RF Monolithics, Inc.
Phone: (972) 233-2903
Fax: (972) 387-9148
RFM Europe
Phone: 44 1963 251383
Fax: 44 1963 251510
漏1999 by RF Monolithics, Inc. The stylized RFM logo are registered trademarks of RF Monolithics, Inc.
E-mail: info@rfm.com
http://www.rfm.com
RO2073A-4-102899
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