鈮?/div>
1.2:1). The shunt inductance, L
TEST
, is tuned for parallel reso-
nance with C
O
at f
C
.
One or more of the following United States patents apply:
4,454,488 and 4,616,197.
Typically, equipment utilizing this device requires emissions testing
and government approval, which is the responsibility of the equip-
ment manufacturer.
Unless noted otherwise, case temperature T
C
= +25擄C鹵2擄C.
The design, manufacturing process, and specifications of this
device are subject to change without notice.
Derived mathematically from one or more of the following directly
measured parameters: f
C
, IL, 3 dB bandwidth, f
C
versus T
C
, and
C
O
.
9.
Turnover temperature, T
O
, is the temperature of maximum (or turn-
over) frequency, f
O
. The nominal frequency at any case tempera-
ture, T
C
, may be calculated from: f = f
O
[1 - FTC (T
O
-T
C
)
2
].
This equivalent RLC model approximates resonator performance
near the resonant frequency and is provided for reference only. The
capacitance C
O
is the static (nonmotional) capacitance between
the two terminals measured at low frequency (10 MHz) with a
capacitance meter. The measurement includes parasitic capaci-
tance with 鈥漀C鈥?pads unconnected. Case parasitic capacitance is
approximately 0.05 pF. Transducer parallel capacitance can by
calculated as: C
P
鈮?/div>
C
O
- 0.05 pF.
RF Monolithics, Inc.
Phone: (972) 233-2903
Fax: (972) 387-9148
RFM Europe
Phone: 44 1963 251383
Fax: 44 1963 251510
漏1999 by RF Monolithics, Inc. The stylized RFM logo are registered trademarks of RF Monolithics, Inc.
E-mail: info@rfm.com
http://www.rfm.com
RO2053A-1-121800
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