RN5006
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN5006
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Small flat package
l
P
C
= 1~2W (mounted on ceramic substrate)
l
Complementary to RN6006
Unit: mm
Equivalent Circuit
JEDEC
鈥?/div>
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05g (typ.)
Maximum Ratings
(Ta = 25擄C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse (Note1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
*
T
j
T
stg
Rating
10
10
6
2
4
0.4
500
1000
150
鈭?5~150
Unit
V
V
V
A
A
mW
mW
擄C
擄C
Marking
<
Note:
Pulse width
=
10ms, duty cycle
<
30 %
=
*
: Mounterd on ceramic substrate (250mm
2
脳 0.8t)
1
2001-10-29
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2
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