RN2701JE~RN2706JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2701JE,RN2702JE,RN2703JE
RN2704JE,RN2705JE,RN2706JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
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路
Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
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Complementary to RN1701JE~RN1706JE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2701JE
RN2702JE
R2
RN2703JE
RN2704JE
E
RN2705JE
RN2706JE
R1 (kW)
4.7
10
22
47
2.2
4.7
R2 (kW)
4.7
10
22
47
47
47
B
R1
JEDEC
JEITA
TOSHIBA
Weight:
g (typ.)
鈥?/div>
鈥?/div>
鈥?/div>
Maximum Ratings
(Ta
=
25擄C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2701JE~RN2706JE
RN2701JE~RN2706JE
RN2701JE~RN2704JE
RN2705JE, RN2706JE
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note)
T
j
T
stg
Rating
-50
-50
-10
-5
-100
100
150
-55~150
Unit
V
V
V
mA
mW
擄C
擄C
1
2
3
Equivalent Circuit
(top view)
5
Q1
4
Q2
Note: Total rating
1
2002-01-24
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