RN2609 Datasheet

IC型號：
RN2609
PDF描述：
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
文件大?。?/label>
185.41KB
PDF頁數(shù)：
6頁
芯片廠家：
TOSHIBA

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RN2607~RN2609

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2607,RN2608,RN2609

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Including two devices in SM6 (super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1607~RN1609

Unit in mm

Equivalent Circuit andBias Resistor Values

Type No.

RN2607

RN2608

RN2609

R1 (k鈩?

R2 (k鈩?

JEDEC

EIAJ

TOSHIBA

Weight: 0.015g

鈥?/div>

2-3N1A

Eauivalent Circuit

(Top View)

Maximum Ratings

(Ta = 25擄C)

擄

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2607~RN2609

RN2607

Emitter-base voltage

RN2608

RN2609

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

stg

EBO

Symbol

CBO

CEO

Rating

鈭?0

鈭?

鈭?5

鈭?00

300

150

鈭?5~150

擄C

Unit

Total rating

2001-06-05

型號

版本

描述

廠商

下載
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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TSOP

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