RN2421~RN2427
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2421,RN2422,RN2423,RN2424
RN2425,RN2426,RN2427
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
l
l
l
l
l
High current type (I
C(MAX)
=
鈭?00mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Low V
CE (sat)
Complementary to RN1421~RN1427
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2421
RN2422
RN2423
RN2424
RN2425
RN2426
RN2427
R1 (k鈩?
1
2.2
4.7
10
0.47
1
2.2
R2 (k鈩?
1
2.2
4.7
10
10
10
10
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-59
2-3F1A
Weight: 0.012 g (typ.)
Maximum Ratings
(Ta = 25擄C)
擄
Characteristics
Collector-Base voltage
Collector-Emitter voltage
RN2421~2427
RN2421~2424
Emitter-Base voltage
RN2425, 2426
RN2427
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2421~2427
I
c
P
c
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?00
200
150
鈭?5~150
mA
mW
擄C
擄C
V
Unit
V
V
1
2001-11-29
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