RN2114~RN2118
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2114,RN2115,RN2116
RN2117,RN2118
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN1114~RN1118
Unit: mm
Equivalent Circuit and Bias Resister Values
Type No.
RN2114
RN2115
RN2116
RN2117
RN2118
R1 (k鈩?
1
2.2
4.7
10
47
R2 (k鈩?
10
10
10
4.7
10
Maximum Ratings
(Ta
=
25擄C)
擄
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2114~2118
RN2114
RN2115
Emitter-base voltage
RN2116
RN2117
RN2118
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2114~2118
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
鈭?0
鈭?0
鈭?
鈭?
鈭?
鈭?5
鈭?5
鈭?00
100
150
鈭?5~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
鈥?/div>
鈥?/div>
2鈭?H1A
Unit
V
V
V
mA
mW
擄C
擄C
1
2001-06-07
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