RN2110,RN2111
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2110,RN2111
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN1110, RN1111
Unit: mm
Equivalent Circuit
Maximum Ratings
(Ta
=
25擄C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?
鈭?00
100
150
鈭?5~150
Unit
V
V
V
mA
mW
擄C
擄C
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
鈥?/div>
鈥?/div>
2鈭?H1A
Electrical Characteristics
(Ta
=
25擄C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2110
RN2111
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
鈥?/div>
鈥?/div>
鈥?/div>
鈥?
鈥?/div>
鈥?/div>
鈥?
Test Condition
V
CB
=
鈭?0V,
I
E
= 0
V
EB
=
鈭?V,
I
C
= 0
V
CE
=
鈭?V,
I
C
=
鈭?mA
I
C
=
鈭?mA,
I
B
=
鈭?.25mA
V
CE
=
鈭?0V,
I
C
=
鈭?mA
V
CB
=
鈭?0V,
I
E
= 0, f = 1MH
z
鈥?/div>
Min
鈥?/div>
鈥?/div>
120
鈥?
鈥?/div>
鈥?/div>
3.29
7
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
鈭?.1
200
3
4.7
10
Max
鈭?00
鈭?00
400
鈭?.3
RN2110相關(guān)型號PDF文件下載
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英文版
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