RN2107~RN2109
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107,RN2108,RN2109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN1107~RN1109
Unit: mm
Equivalent Circuit and Bias Resister Values
Type No.
RN2107
RN2108
RN2109
R1 (k鈩?
10
22
47
R2 (k鈩?
47
47
22
Maximum Ratings
(Ta = 25擄C) (Q1, Q2 Common)
擄
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2107~RN2109
RN2107
Emitter-base voltage
RN2108
RN2109
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2107~RN2109
I
C
P
C*
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
鈭?0
鈭?0
鈭?
鈭?
鈭?5
鈭?00
100
150
鈭?5~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
鈥?/div>
鈥?/div>
2-2H1A
Unit
V
V
V
mA
mW
擄C
擄C
*: Total rating
1
2001-06-07
next