RN1966FE Datasheet

IC型號：
RN1966FE
PDF描述：
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) ...
文件大小：
89.32KB
PDF頁數(shù)：
4頁
芯片廠家：
TOSHIBA

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RN1961FE~RN1966FE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1961FE,RN1962FE,RN1963FE

RN1964FE,RN1965FE,RN1966FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications.

路

Two devices are incorporated into an Extreme-Super-Mini (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

路

Complementary to RN2961FE~RN2966FE

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1961FE

RN1962FE

RN1963FE

RN1964FE

RN1965FE

RN1966FE

R1 (kW)

4.7

2.2

4.7

R2 (kW)

4.7

JEDEC

JEITA

TOSHIBA

Weight:

g (typ.)

鈥?/div>

Maximum Ratings

(Ta

25擄C) (Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1961FE~

1966FE

RN1961FE~

1964FE

RN1965FE,

1966FE

Symbol

CBO

CEO

Rating

EBO

(Note)

stg

100

150

-55~150

擄C

Unit

Equivalent Circuit

(top view)

Emitter-base voltage

Collector current

Collector power dissipation RN1961FE~

RN1966FE

Junction temperature

Storage temperature range

Note: Total rating

2002-01-29

型號

版本

描述

廠商

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