RN1961~RN1966
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1961,RN1962,RN1963
RN1964,RN1965,RN1966
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
Including two devices in US6 (ultra super mini type 6 leads)
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
路
Complementary to RN2961~RN2966
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1961
RN1962
RN1963
RN1964
RN1965
RN1966
R1 (k鈩?
4.7
10
22
47
2.2
4.7
R2 (k鈩?
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
鈥?/div>
鈥?/div>
2-2J1B
Equivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25擄C) (Q1, Q2 Common)
擄
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1961~1966
RN1961~1966
RN1961~1964
RN1965, 1966
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
10
5
100
200
150
鈭?5~150
Unit
V
V
V
mA
mW
擄C
擄C
*:
Total rating
1
2001-06-07
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