RN1910,RN1911
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1910,RN1911
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
Including two devices in US6 (ultra super mini type 6 leads)
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN2910, RN2911
Unit: mm
Equivalent Circuit
Maximum Ratings
(Ta = 25擄C) (Q1, Q2 Common)
擄
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
J
j
T
stg
Rating
50
50
5
100
200
150
鈭?5~150
Unit
V
V
V
mA
mW
擄C
擄C
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
鈥?/div>
鈥?/div>
2-2J1A
*:
Total rating
Equivalent Circuit
(Top View)
1
2001-06-07
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