RN1901~RN1906
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1901,RN1902,RN1903
RN1904,RN1905,RN1906
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
Including two devices in US6 (ultra super mini type with 6 leads)
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN2901~RN2906
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1901
RN1902
RN1903
RN1904
RN1905
RN1906
R1 (k鈩?
4.7
10
22
47
2.2
4.7
R2 (k鈩?
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
鈥?/div>
鈥?/div>
2-2J1A
Equivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25擄C) (Q1, Q2 Common)
擄
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1901~1906
RN1901~1906
RN1901~1904
RN1905, 1906
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
10
5
100
200
150
鈭?5~150
Unit
V
V
V
mA
mW
擄C
擄C
*:
Total rating
1
2001-06-07
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