RN1241~RN1244
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
For Muting and Switching Applications
l
High emitter-base voltage
: V
EBO
= 25v (min)
l
High reverse hfe
: reverse h
FE
= 150 (typ.) (V
CE
=
鈭?V,
I
C
=
鈭?ma)
l
Low on resistance
: R
ON
= 1鈩?(typ.) (I
B
= 5mA)
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
Unit: mm
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
鈥?/div>
鈥?/div>
2-4E1A
Maximum Ratings
(Ta = 25擄C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
c
P
c
T
j
T
stg
Rating
50
20
25
300
300
150
鈭?5~150
Unit
V
V
V
mA
mW
擄C
擄C
1
2001-06-07
next