RN1210,RN1211
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1210,RN1211
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors.
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN2210, RN2211
Unit: mm
Equivalent Circuit
Maximum Ratings
(Ta
=
25擄C)
擄
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
c
P
c
T
j
T
stg
Rating
50
50
5
100
300
150
鈭?5~150
Unit
V
V
V
mA
mW
擄C
擄C
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
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2-4E1A
Electrical Characteristics
(Ta
=
25擄C)
擄
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1210
RN1211
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Test Condition
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 10V, I
C
= 5mA
V
CB
=
鈭?0V,
I
E
= 0, f = 1MHz
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Min
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鈥?/div>
120
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3.29
7
Typ.
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0.1
250
3
4.7
10
Max
100
100
700
0.3
RN1211相關(guān)型號(hào)PDF文件下載
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英文版
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