RN1207~RN1209
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1207,RN1208,RN1209
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors.
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN2207~2209
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2207
RN2208
RN2208
R1 (k鈩?
10
22
47
R2 (k鈩?
47
47
22
Maximum Ratings
(Ta = 25擄C)
擄
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1207
Emitter-base voltage
RN1208
RN1209
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
I
c
P
c
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
100
300
150
鈭?5~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
鈥?/div>
鈥?/div>
2-4E1A
Unit
V
V
V
mA
mW
擄C
擄C
1
2001-06-07
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