RN1114~RN1118
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114,RN1115,RN1116,RN1117,RN1118
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors.
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN2114~2118
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1114
RN1115
RN1116
RN1117
RN1118
R
1
(k鈩?
1
2.2
4.7
10
47
R
2
(k鈩?
10
10
10
4.7
10
Maximum Ratings
(Ta = 25擄C)
擄
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1114~1118
RN1114
RN1115
Emitter-base voltage
RN1116
RN1117
RN1118
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1114~1118
I
c
P
c
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
5
6
7
15
25
100
100
150
鈭?5~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
V
V
鈥?/div>
鈥?/div>
2-2H1A
V
mA
mW
擄C
擄C
1
2001-06-07
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