RN1113FT Datasheet

IC型號(hào)：
RN1113FT
PDF描述：
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) ...
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107.58KB
PDF頁數(shù)：
3頁
芯片廠家：
TOSHIBA

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RN1112FT,RN1113FT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1112FT,RN1113FT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications.

路

High-density mount is possible because of devices housed in very thin

TESM packages.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

Wide range of resistor values are available to use in various circuit

designs.

Complementary to RN2112FT, RN2113FT

Unit: mm

路

Equivalent Circuit and Bias Resistor Values

JEDEC

鈥?/div>

g (typ.)

JEITA

TOSHIBA

Weight:

Symbol

CBO

CEO

EBO

(Note)

stg

Rating

100

150

-55~150

Unit

擄C

Maximum Ratings

(Ta

25擄C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector poser dissipation

Junction temperature

Storage temperature range

Note: Total rating

2002-01-29

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