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RN1010, RN1011

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1010,RN1011

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l

With built-in bias resistors

l

Simplify circuit design

l

Reduce a quantity of parts and manufacturing process

l

Complementary to RN2010~RN2011

Unit: mm

Equivalent Circuit

Maximum Ratings

(Ta

=

25擄C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

*

T

j

T

stg

Rating

50

5

100

400

150

鈭?5~125

Unit

V

mA

mW

擄C

JEDEC

EIAJ

TOSHIBA

Weight: 0.21g

TO-92

SC-43

2-5F1B

Electrical Characteristics

(Ta = 25擄C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Input resistor

RN1010

RN1011

Symbol

I

CBO

I

EBO

h

FE

V

CE (sat)

f

T

C

ob

R1

Test

Circuit

鈥?/div>

鈥?

鈥?/div>

鈥?

Test Condition

V

CB

= 50V, I

E

= 0

V

EB

= 5V, I

C

= 0

V

CE

= 5V, I

C

= 1mA

I

C

= 5mA, I

B

= 0.25mA

V

CE

= 10V, I

C

= 5mA

V

CB

= 10V, I

E

= 0, f = 1MH

z

Min

鈥?/div>

120

鈥?

鈥?/div>

3.29

7

Typ.

鈥?/div>

0.1

250

3

4.7

10

Max

100

700

0.3

鈥?/div>

6

6.11

13

V

MH

z

pF

k鈩?/div>

Unit

nA

1

2001-06-07

型號

版本

描述

廠商

下載
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RN1007
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RN1009
RN1010

英文版

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

TOSHIBA

RN1010
RN1010

英文版

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RN1010

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