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RMWP23001 Datasheet

  • RMWP23001

  • 21-24 GHz Power Amplifier MMIC

  • 9頁

  • FAIRCHILD

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RMWP23001
June 2004
RMWP23001
21鈥?4 GHz Power Amplifier MMIC
General Description
The RMWP23001 is a 4-stage GaAs MMIC amplifier
designed as a 21 to 24 GHz Power Amplifier for use in point
to point and point to multi-point radios, and various
communications applications. In conjunction with other
Fairchild Semiconductor amplifiers, multipliers and mixers
it forms part of a complete 23 GHz transmit/receive chipset.
The RMWP23001 utilizes our 0.25碌m power PHEMT
process and is sufficiently versatile to serve in a variety of
power amplifier applications.
Features
鈥?4mil substrate
鈥?Small-signal gain 22.5dB (typ.)
鈥?1dB compressed Pout 23.5dBm (typ.)
鈥?Chip size 2.6mm x 1.2mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
I
D
P
IN
T
C
T
STG
R
JC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd鈥揤g)
Positive DC Current
RF Input Power (from 50
鈩?/div>
source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
607
+8
-30 to +85
-55 to +125
36.5
Units
V
V
V
mA
dBm
擄C
擄C
擄C/W
漏2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C

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