RMWL38001
37-40 GHz Low Noise Amplifier MMIC
PRODUCT INFORMATION
Description
The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL38001 utilizes Raytheon鈥檚 0.25碌m power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
4 mil substrate
Noise figure 2.7 dB (typ.)
Small-signal gain 22 dB (typ.)
1dB compressed Pout 13.5 dBm (typ.)
Chip size 2.9 mm x 1.25 mm
Features
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+4 V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC current
RF Input Power (from 50
鈩?/div>
source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
I
D
P
IN
T
C
T
stg
R
JC
Value
+6
-2
8
75
+6
-30 to +85
-55 to +125
169
Unit
Volts
Volts
Volts
mA
dBm
擄C
擄C
擄C/W
Electrical
Characteristics
(At 25擄C),
50
鈩?/div>
system,
Vd=+4 V,
Quiescent Current
Idq=50 mA
Parameter
Frequency Range
Gate Supply Voltage (Vg)
1
Noise Figure
Gain Small Signal at
Pin=-20 dBm
Gain Variation vs.
Frequency
Gain at 1dB Compression
Power Output at 1dB
Compression
Min
37
Typ
-0.5
2.7
22
1.5
21
13.5
Max
40
4.0
Unit
GHz
V
dB
dB
dB
dB
dBm
Parameter
Power Output Saturated
Drain Current at
Pin=-20 dBm
Drain Current at
1dB Compression
Input Return Loss
(Pin=-15 dBm)
Output Return Loss
(Pin=-15 dBm)
OIP3
Min
Typ
15
50
55
12
13
23
Max
Unit
dBm
mA
mA
dB
dB
dBm
Note:
1. Typical range of negative gate voltage is -0.9 to -0.1 V to set typical Idq of 50 mA.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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