RMPA61810
March 2004
RMPA61810
Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC
General Description
The Fairchild Semiconductor RMPA61810 is a fully
monolithic power amplifier operating over the 6.0 to 18.0
GHz frequency band. The amplifier uses a 0.25 micron
Pseudomorphic High Electron Mobility Transistor (PHEMT)
process to maximize efficiency and output power. The chip
configuration incorporates two stages of reactively
combined amplifiers at the output preceded by an input
amplifier stage. This single channel amplifier provides
typically, 21dB small signal gain and 31dBm output power
at 1dB gain compression.
Features
鈥?21dB Typical Small Signal Gain
鈥?2.0:1 Typical Input VSWR, 2.5:1 Typical Output VSWR
鈥?31dBm Output Power at 1dB Gain Compression
鈥?32dBm Output Power at 3dB Gain Compression
鈥?22% Typical Power Added Efficiency at 1dB Gain
Compression
鈥?Chip size: 6.55mm x 2.67mm x 0.1mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
Pin
Id
T
STG
Tc
R
JC
Parameter
Positive Drain DC Voltage
Negative DC Voltage
Simultaneous (Vd鈥揤g)
RF CW Input Power (50
鈩?/div>
source)
Drain Current
Storage Temperature
Operating Baseplate Temperature
Thermal Resistance (Channel to Backside)
Ratings
8.5
-2
+10.5
27
1.2
-55 to +125
-40 to +85
12
Units
V
V
V
dBm
A
擄C
擄C
擄C/W
Electrical Characteristics
(Operated at 25擄C, 50
鈩?/div>
system, Vd = +8V, quiescent current (Idq = 600 mA)
Parameter
Frequency Range
Small Signal Gain
P1dB Compression
P3dB Compression
PAE at 1dB Gain Compression
Input Return Loss
Output Return Loss
Gate Voltage (Vg)
1
Gain vs. Temp. 0 ~ 85擄C
Note:
1. Typical range of the negative gate voltage is -1 to 0V to set a typical Idq of 600 mA.
Min
6.0
15
28
30
12
Typ
21
31
32
22
9.5
7.4
-0.4
-0.025
Max
18.0
Units
GHz
dB
dBm
dBm
%
dB
dB
V
dB/擄C
漏2004 Fairchild Semiconductor Corporation
RMPA61810 Rev. B
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