band. The 10 pin, 5 x 5 x 1.5 mm package with internal match-
鈩?/div>
, and internal bias network
components, allow for extremely simpli鏗乪d integration. An on-
chip detector provides power sensing capability. The PA鈥檚 low
power consumption and excellent linearity are achieved using
our InGaP Heterojunction Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics
1
802.11a OFDM Modulation
(176 碌s burst time, 100 碌s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Min
Typ
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Mirror Supply Current
Gain
Total Current @ 18dBm Pout
EVM @ 18dBm
Pout
2
Detector Output @ 18dBm Pout
Detector Threshold
3
Notes:
1. VCC = 3.3V, VPC = 2.9V, T
A
= 25擄C, PA is constantly biased, 50
鈩?/div>
system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. P
OUT
measured at P
IN
corresponding to power detection threshold.
4.9
3.0
3.3
2.9
26
33
230
2.3
450
5
Max
5.9
3.6
Units
GHz
V
V
mA
dB
mA
%
mV
dBm
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA5255 Rev. E
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