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RMPA5252 Datasheet

  • RMPA5252

  • 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier

  • 7頁(yè)

  • FAIRCHILD

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RMPA5252 4.9鈥?.9 GHz InGaP HBT WLAN Linear Power Amplifier
Preliminary
March 2005
RMPA5252
4.9鈥?.9 GHz InGaP HBT WLAN Linear Power Amplifier
Features
鈻?/div>
Full 4.9 to 5.9GHz operation
鈻?/div>
34dB small signal gain
鈻?/div>
3% EVM at 18dBm modulated power out
鈻?/div>
3.3V single positive supply operation
鈻?/div>
Integrated power detector with 20dB dynamic range
鈻?/div>
Lead-free RoHS compliant 3 x 3 x 0.9 mm leadless package
鈻?/div>
Internally matched to 50 Ohms and DC blocked RF input/
output
鈻?/div>
Optimized for use in 802.11a applications
General Description
The RMPA5252 power amplifier is designed for high
performance WLAN applications in the 4.9鈥?.9 GHz frequency
band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal
matching on both input and output to 50 Ohms minimizes next
level PCB space and allows for simplified integration. An on-chip
detector provides power sensing capability. The PA鈥檚 low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics
1
802.11a OFDM Modulation
(with 176 碌s burst time, 100 碌s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Mirror Supply Current
Gain
Total Current @ 18dBm P
OUT
EVM @ 18dBm P
OUT2
Detector Output @ 18dBm P
OUT
Detector Threshold
Notes:
1. VCC = 3.3V, VM12, VM34 = 2.4V, T
A
= 25擄C, PA is constantly biased, 50戮 system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. P
OUT
measured at P
IN
corresponding to power detection threshold.
Min
4.9
3.0
Typ
3.3
2.4
28
34
275
3.0
500
5
Max
5.9
3.6
Units
GHz
V
V
mA
dB
mA
%
mV
dBm
3
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA5252 Rev. C

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