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RMPA5251 Datasheet

  • RMPA5251

  • 4.90-5.85 GHz InGaP HBT Linear Power Amplifier

  • 10頁(yè)

  • FAIRCHILD

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RMPA5251
October 2004
RMPA5251
4.90鈥?.85 GHz InGaP HBT Linear Power Amplifier
General Description
The RMPA5251 power amplifier is designed for high
performance WLAN applications in the 4.9 to 5.35 and 5.15
to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3
x 0.9 mm package with internal matching on both input and
output to 50
鈩?/div>
minimizes next level PCB space and allows
for simplified integration. The on-chip detector provides
power sensing capability while the logic control provides
power saving shutdown options. The PA鈥檚 low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
鈥?2.5% EVM at 18.0dBm modulated power out
鈥?3.3V single positive supply operation
鈥?Adjustable bias current operation
鈥?Two power saving shutdown options (bias and logic
control)
鈥?Integrated power detector with >18dB dynamic range
鈥?Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless
package
鈥?Internally matched to 50
鈩?/div>
鈥?Minimal external components
鈥?Optimized for use in IEEE 802.11a
WLAN applications
Device
Features
鈥?4.9 to 5.85 GHz Operation
鈥?27dB small signal gain
鈥?26dBm output power @ 1dB compression
Electrical Characteristics
1,3
802.11a OFDM
Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
10
Supply Voltage
Gain
Total Current @ 18dBm P
OUT
Total Current @ 19dBm P
OUT
EVM @ 18dBm P
OUT2
EVM @ 19dBm P
OUT2
Detector Output @ 19dBm P
OUT
Detector Threshold
4
P
OUT
Spectral Mask Compliance
5, 6
Minimum
4.90
3.0
Typical
3.3
27
250
260
2.5
3.5
450
5.0
21.0
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
3.3
28
240
250
2.5
3.5
500
5.0
20.0
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Electrical Characteristics
1
Single Tone
Parameter
Frequency
10
Supply Voltage
Gain
7
Total Quiescent Current
7, 11
Minimum
4.90
3.0
Typical
3.3
27
140鈥?20
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
3.3
27.5
140鈥?20
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
Notes:
1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25擄C, PA is constantly biased, 50
鈩?/div>
system.
2. Percentage includes system noise floor of EVM=0.8%.
3. Not measured 100% in production.
4. P
OUT
measured at P
IN
corresponding to power detection threshold.
5. Measured at P
IN
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6. P
IN
is adjusted to point where performance approaches spectral mask requirements.
7. 100% Production screened.
8. Bias Current is included in the total quiescent current.
9. VL is set to logic level for device off operation.
10. See Application information on Page 3.
11. See Data on Page 8.
漏2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D

RMPA5251 產(chǎn)品屬性

  • 4,000

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 4.9GHz ~ 5.85GHz

  • 26dBm（398.1mW）

  • 27dB

  • -

  • 802.11/Wi-Fi，WLAN

  • 3 V ~ 3.6 V

  • 140mA ~ 220mA

  • -

  • 16-VFQFN

  • 帶卷 (TR)

  • RMPA5251TR

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