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RMPA2550 Datasheet

  • RMPA2550

  • 2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Pow...

  • 837.23KB

  • 14頁(yè)

  • FAIRCHILD

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RMPA2550
August 2004
RMPA2550
2.4鈥?.5 GHz and 5.15鈥?.85 GHz Dual Band InGaP HBT Linear Power Amplifier
General Description
The RMPA2550 is a dual frequency band power amplifier
designed for high performance WLAN applications in the
2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The
single low profile 20 pin 3 x 4 x 0.9 mm package with
internal matching on both input and output to 50
鈩?/div>
minimizes next level PCB space and allows for simplified
integration. The two on-chip detectors provide power
sensing capability while the logic control provides power
saving shutdown options. The PA鈥檚 low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
鈥?27 dB modulated gain 5.15 to 5.85 GHz band
鈥?26 dBm output power @ 1 dB compression both
frequency bands
鈥?2.0% EVM at 18 dBm modulated Pout, 2.45 GHz
鈥?2.3% EVM at 18 dBm modulated Pout, 5.45 GHz
鈥?3.3 V single positive supply operation
鈥?Adjustable bias current operation
鈥?Two power saving shutdown options (bias and logic
control)
鈥?Separate integrated power detectors with 20 dB dynamic
range
鈥?Low profile 20 pin, 3 x 4 x 0.9 mm standard
Device
QFN leadless package
鈥?Internally matched to 50 ohms
鈥?Optimized for use in 802.11a/b/g
applications
Features
鈥?Dual band operation in a single package design
鈥?26 dB modulated gain 2.4 to 2.5 GHz band
Electrical Characteristics
1,3
802.11g/a OFDM
Modulation (with 176 碌s burst time, 100碌s idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current @ 18dBm P
OUT
Total Current @ 19dBm P
OUT
EVM @ 18dBm P
OUT2
EVM @ 19dBm P
OUT2
Detector Output @ 19dBm P
OUT
Detector Threshold
4
P
OUT
Spectral Mask Compliance
5,7
Minimum
2.4
3.0
24.5
Typical
3.3
26
150
157
2.0
3.0
508
5.0
21.0
Maximum
2.5
3.6
28
182
189
2.5
3.5
600
7.0
Minimum
5.15
3.0
25.5
Typical
3.3
27
228
235
2.5
3.5
780
5.0
21.0
Maximum
5.85
3.6
29
260
267
3.5
4.5
865
7.0
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Electrical Characteristics
3,6
802.11b CCK
Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current
First Sidelobe Power
Second Sidelobe Power
Max P
OUT
Spectral Mask Compliance
7
Minimum
2.4
3.0
24.5
Typical
3.3
26
250
-40
-55
24.0
Maximum
2.5
3.6
28
Unit
GHz
V
dB
mA
dBc
dBc
dBm
Notes:
1:
VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25擄C, PA is constantly biased, 50
鈩?/div>
system. VL adjusted for either 2.4
or 5 GHz operation.
2:
Percentage includes system noise floor of EVM=0.8%.
3:
Not measured 100% in production.
4:
P
OUT
measured at P
IN
corresponding to power detection threshold.
5:
Measured at P
IN
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6:
VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25擄C, P
OUT
=+23 dBm, 50
鈩?/div>
system. Satisfies spectral mask.
7:
P
IN
is adjusted to point where performance approaches spectral mask requirements.
漏2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D

RMPA2550 產(chǎn)品屬性

  • 3,000

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 2.4GHz ~ 2.5GHz，5.15GHz ~ 5.85GHz

  • -

  • 26dB

  • -

  • 802.11/Wi-Fi，WLAN

  • 3 V ~ 3.6 V

  • 250mA

  • -

  • 20-QFN

  • 帶卷 (TR)

  • RMPA2550-NDRMPA2550TR

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