鈻?/div>
Optimized for use in 802.11b/g applications
General Description
The RMPA2456 power amplifier is designed for high
performance WLAN applications in the 2.4鈥?.5 GHz frequency
band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal
matching on both input and output to 50 Ohms minimizes next
level PCB space and allows for simplified integration. The on-
chip detector provides power sensing capability while the bias
control provides power saving shutdown capability. The PA鈥檚
industry leading low power consumption and excellent linearity
are achieved using our InGaP Heterojunction Bipolar Transistor
(HBT) technology.
Device
Electrical Characteristics
1
802.11g OFDM Modulation
(176 碌s burst time, 100 碌s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Mirror Supply Current
Gain
Total Current @ 19dBm P
OUT
EVM @ 19dBm P
OUT2
Detector Output @ 19dBm P
OUT
Detector Threshold
3
Notes:
1. VC1, VC2, VC3 = 3.3V, VM123 = 3.3V, T
A
= 25擄C, PA is constantly biased, 50
鈩?/div>
system.
2. Percentage includes system noise 鏗俹or of EVM = 0.8%.
3. P
OUT
measured at P
IN
corresponding to power detection threshold.
Min
2.4
3.0
3.0
Typ
3.3
3.3
3.3
31.5
100
2.8
775
5
Max
2.5
3.6
3.6
Units
GHz
V
V
mA
dB
mA
%
mV
dBm
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA2456 Rev. C
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