GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm
鈩?/div>
minimizes next level PCB space and allows for simplified
integration. The on-chip detector provides power sensing
capability while the logic control provides power saving
shutdown options. The PA鈥檚 low power consumption and
excellent linearity are achieved using our InGaP Heterojunction
Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics
1
802.11g OFDM Modulation
(with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Gain
Total Current @ 22dBm P
OUT
EVM @ 22dBm P
OUT2
Detector Output @ 22dBm P
OUT
Detector Threshold
3
Notes:
1. VC1, VC2 = 5.0 Volts, VM12 = 3.3V, T
A
= 25擄C, PA is constantly biased, 50
鈩?/div>
system.
2. Percentage includes system noise 鏗俹or of EVM = 0.8%.
3. P
OUT
measured at P
IN
corresponding to power detection threshold.
Min
2.4
4.5
2.8
Typ
5.0
3.3
30
195
3.0
960
4
Max
2.5
5.5
3.6
Units
GHz
V
V
dB
mA
%
mV
dBm
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA2455 Rev. F
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