RMPA2451
April 2004
RMPA2451
2.4鈥?.5 GHz GaAs MMIC Power Amplifier
General Description
Fairchild Semiconductor鈥檚 RMPA2451 is a partially
matched monolithic power amplifier in a surface mount
package for use in wireless applications in the 2.4 to 2.5
GHz ISM frequency band. The amplifier may be biased for
linear, class AB or class F for high efficiency applications.
External matching components are required to optimize the
RF performance. The MMIC chip design utilizes our
0.25碌m power Pseudomorphic High Electron Mobility
(PHEMT) process.
Features
鈥?38% power added efficiency
鈥?29dBm typical output power
鈥?Small package outline: 0.28" x 0.28" x 0.07"
鈥?Low power mode: 0 dBm
Device
Absolute Ratings
Symbol
Vd1, Vd2
Vg1, Vg2
Vd鈥揤g
P
IN
Id1
Id2
Ig
T
C
T
CASE
T
STG
R
JC
Parameter
Positive Drain DC Voltage
Negative Gate DC Voltage
Simultaneous Drain to Gate Voltage
RF Input Power (from 50
鈩?/div>
source)
Drain Current, First Stage
Drain Current, Second Stage
Gate Current
Channel Temperature
Operating Case Temperature
Storage Temperature Range
Thermal Resistance (Channel to Case)
Min
0
-5
Max
+8
0
+10
+10
75
525
5
175
85
125
33
Units
V
V
V
dBm
mA
mA
mA
擄C
擄C
擄C
擄C/W
-40
-40
漏2004 Fairchild Semiconductor Corporation
RMPA2451 Rev. B
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