鈥?/div>
35% Power Added Efficiency
31dBm Output Power (P1dB) at Vd = +7V
28dBm Output Power (P1dB) at Vd = +5V
No external RF matching components
Small Package Outline: 0.28" x 0.28" x 0.07"
Thermal Resistance (Channel to Case): 33擄C/W
Device
Absolute Ratings
Symbol
Vd1, Vd2
Vg1, Vg2
Vd鈥揤g
P
IN
Ids
Ig
Tch
T
CASE
T
STG
Parameter
Positive Drain DC Voltage
Negative Gate DC Voltage
Simultaneous Drain to Gate Voltage
RF Input Power (from 50
鈩?/div>
source)
Drain to Source Current
Gate Current
Channel Temperature
Operating Case Temperature
Storage Temperature Range
Rating
+8
-5
+10
+10
575
5
150
-40 to 100
-40 to 125
Units
V
V
V
dBm
mA
mA
擄C
擄C
擄C
漏2004 Fairchild Semiconductor Corporation
RMPA2450 Rev. C
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