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PRELIMINARY

RMPA2271 WCDMA/UMTS Power Edge鈩?Power Ampli鏗乪r Module with Integrated Power Detector

May 2005

RMPA2271

WCDMA/UMTS Power Edge鈩?Power Ampli鏗乪r

Module with Integrated Power Detector

Features

鈻?/div>

Temperature compensated, integrated power detector with

>20dB dynamic range

鈻?/div>

41% WCDMA ef鏗乧iency at +28dBm average output power

1920鈥?980MHz

鈻?/div>

Meets UMTS/WCDMA and HSDPA performance

requirements

鈻?/div>

Compact Lead-free compliant LCC package鈥?/div>

(3.0 x 3.0 x 1.0 mm nominal)

鈻?/div>

Single positive-supply operation and low power and

shutdown modes

鈻?/div>

Low Vref (2.85V) compatible with advanced handset

chipsets

鈻?/div>

Internally matched to 50

鈩?/div>

and DC blocked RF

input/output

General Description

The RMPA2271 Power Ampli鏗乪r Module (PAM) is Fairchild鈥檚

latest innovation in 50

鈩?/div>

matched, surface mount modules

targeting WCDMA/UMTS applications. Answering the call for

integrated Power Detection, the RMPA2271 offers the ability to

measure power output over a 20dB range. This feature

eliminates the need of an external power detector and lossy

directional coupler, improving system perfomance and reducing

overall cost. Simple two-state Vmode control is all that is

needed to change the PA optimization from high power to low

power mode to minimize current usage. The 3 x 3 x 1.0mm LCC

package 鏗乼s into the tightest spaces available on handset

boards and is footprint compatible with existing 3 x 3mm LCC

power ampli鏗乪rs. The multi-stage GaAs Microwave Monolithic

Integrated Circuit (MMIC) is manufactured using Fairchild鈥檚

InGaP Heterojunction Bipolar Transistor (HBT) process.

Device

Functional Block Diagram

Vcc1

RF IN

Vmode

1

2

3

4

MMIC

Input

Match

DC Bias Control

Power Detector

Output

Match

8

7

6

5

Vcc2

RF OUT

GND

Pdet

Vref

漏2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

RMPA2271 Rev. B

型號

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描述

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RMPA2271 Datasheet

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