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RMPA2263 Datasheet

  • RMPA2263

  • WCDMA Power Amplifier Module 1920-1980 MHz

  • 7頁

  • FAIRCHILD

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RMPA2263
PRELIMINARY
May 2005
WCDMA Power Amplifier Module
1920鈥?980 MHz
Features
鈻?/div>
40% WCDMA efficiency at +28 dBm Pout
鈻?/div>
14% WCDMA efficiency (85 mA total current) at +16 dBm
Pout
鈻?/div>
Linear operation in low-power mode up to +19 dBm
鈻?/div>
Low quiescent current (Iccq): 25 mA in low-power mode
鈻?/div>
Meets UMTS/WCDMA performance requirements
鈻?/div>
Meets HSDPA performance requirements
鈻?/div>
Single positive-supply operation with low power and shut-
down modes
鈥?3.4V typical Vcc operation
鈥?Low Vref (2.85V) compatible with advanced handset
chipsets
鈻?/div>
Compact Lead-free compliant LCC package 鈥?/div>
(4.0 x 4.0 x 1.5 mm nominal)
鈻?/div>
Industry standard pinout
鈻?/div>
Internally matched to 50 Ohms and DC blocked RF input/
output
General Description
The RMPA2263 Power Amplifier Module (PAM) is Fairchild鈥檚
latest innovation in 50 Ohm matched, surface mount modules
targeting UMTS/WCDMA/HSDPA applications. Answering the
call for ultra-low DC power consumption and extended battery
life in portable electronics, the RMPA2263 uses novel
proprietary circuitry to dramatically reduce amplifier current at
low to medium RF output power levels (< +16 dBm), where the
handset most often operates. A simple two-state Vmode control
is all that is needed to reduce operating current by more than
50% at 16 dBm output power, and quiescent current (Iccq) by
as much as 70% compared to traditional power-saving
methods. No additional circuitry, such as DC-to-DC converters,
are required to achieve this remarkable improvement in
amplifier efficiency. Further, the 4 x 4 x 1.5 mm LCC package is
pin-compatible and a drop-in replacement for last generation 4 x
4 mm PAMs widely used today, minimizing the design time to
apply this performance-enhancing technology. The multi-stage
GaAs Microwave Monolithic Integrated Circuit (MMIC) is
manufactured using Fairchild RF鈥檚 InGaP Heterojunction
Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vcc1
1
RF IN
GND
Vmode
Vref
10
Vcc2
INPUT
MATCH
OUTPUT
MATCH
BIAS/MODE SWITCH
2
3
4
5
9
GND
8
RF OUT
7
GND
6
GND
11 (paddle ground on package bottom)
漏2004 Fairchild Semiconductor Corporation
鈩L-i
1
www.fairchildsemi.com
RMPA2263
Rev. G
鈩?/div>
o
L
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i
鈩L-i
RMPA2263
WCDMA Power Amplifier Module 1920鈥?980 MHz (Preliminary)

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