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RMPA2259 Datasheet

  • RMPA2259

  • 28 dBm WCDMA PowerEdge Power Amplifier Module

  • 11頁

  • FAIRCHILD

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RMPA2259 28 dBm WCDMA Power Edge
TM
Power Amplifier Module
May 2005
RMPA2259
28 dBm WCDMA PowerEdge鈩?Power Amplifier Module
Features
鈥?40% CDMA efficiency at +28dBm average output power
鈥?Single positive-supply operation and low power and
shutdown modes
鈥?Meets WCDMA/UTMS and HSDPA performance
requirements
鈥?Compact Lead-free compliant LCC package
- 4.0 x 4.0 x 1.5 mm
鈥?Industry standard pinout
鈥?Internally matched to 50鈩?and DC blocked RF input/
output
General Description
The RMPA2259 power amplifier module (PAM) is designed
for WCDMA/UTMS and HSDPA applications. The 2-stage
PAM is internally matched to 50鈩?to minimize the use of
external components and features a low-power mode to
reduce standby current and DC power consumption during
peak phone usage. High power-added efficiency and
excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vcc1
1
RF IN
GND
Vmode
Vref
10
Vcc2
INPUT
MATCH
OUTPUT
MATCH
BIAS/MODE SWITCH
2
3
4
5
9
GND
8
RF OUT
7
GND
6
GND
11 (paddle ground on package bottom)
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA2259 Rev. E

RMPA2259 產(chǎn)品屬性

  • 2,500

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 1.92GHz ~ 1.98GHz

  • -

  • 24dB

  • 3dB

  • W-CDMA

  • 3 V ~ 4.2 V

  • 50mA

  • -

  • 11-LCC

  • 帶卷 (TR)

  • RMPA2259TR

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