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RMPA2059 Datasheet

  • RMPA2059

  • WCDMA PowerEdge Power Amplifier Module

  • 7頁

  • FAIRCHILD

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RMPA2059 WCDMA Power Edge
TM
Power Amplifier Module
May 2005
RMPA2059
WCDMA PowerEdge鈩?Power Amplifier Module
Features
鈥?40% CDMA efficiency at +27dBm average output power
鈥?Single positive-supply operation and low power and
shutdown modes
鈥?Meets UTMS/WCDMA and HSDPA performance
requirements
鈥?Compact Lead-free compliant LCC package
- 4.0 x 4.0 x 1.5 mm
鈥?Industry standard pinout
鈥?Internally matched to 50鈩?and DC blocked RF input/
output
General Description
The RMPA2059 power amplifier module (PAM) is designed
for WCDMA applications. The 2 stage PAM is internally
matched to 50鈩?to minimize the use of external
components and features a low-power mode to reduce
standby current and DC power consumption during peak
phone usage. High power-added efficiency and excellent
linearity are achieved using our InGaP Heterojunction
Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vcc1
1
RF IN
GND
Vmode
Vref
10
Vcc2
INPUT
MATCH
OUTPUT
MATCH
BIAS/MODE SWITCH
2
3
4
5
9
GND
8
RF OUT
7
GND
6
GND
11 (paddle ground on package bottom)
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA2059 Rev. F

RMPA2059 產(chǎn)品屬性

  • 2,500

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 1.92GHz ~ 1.98GHz

  • -

  • 26dB

  • 3dB

  • W-CDMA

  • 3.1 V ~ 4.5 V

  • 80mA

  • -

  • 11-LCC

  • 帶卷 (TR)

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