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Alternative pin-out to Fairchild RMPA1965
General Description
The RMPA1967 power amplifier module (PAM) is designed for
CDMA, CDMA2000-1X, WCDMA and HSDPA personal commu-
nications system (PCS) applications. The 2-stage PAM is inter-
nally matched to 50 Ohms to minimize the use of external
components and features a low-power mode to reduce standby
current and DC power consumption during peak phone usage.
High power-added efficiency and excellent linearity are
achieved using Fairchild RF鈥檚 InGaP Heterojunction Bipolar
Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vref
1
DC Bias Control
Vmode
2
Input
Match
Output
Match
7
GND
8
GND
RF IN
3
6
RF OUT
Vcc1
4
5
Vcc2
(paddle ground on
package bottom)
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA1967 Rev. F