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Meets HSDPA performance requirement
General Description
The RMPA1965 power amplifier module (PAM) is designed for
CDMA, CDMA2000-1X, WCDMA and HSDPA personal commu-
nications system (PCS) applications. The 2 stage PAM is inter-
nally matched to 50鈩?to minimize the use of external
components and features a low-power mode to reduce standby
current and DC power consumption during peak phone usage.
High power-added efficiency and excellent linearity are
achieved using our InGaP Heterojunction Bipolar Transistor
(HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vcc1 1
RF IN 2
Vmode 3
DC BIAS CONTROL
Vref 4
INPUT
MATCH
OUTPUT
MATCH
8 Vcc2
7 RF OUT
6 GND
5 GND
(paddle ground on package bottom)
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA1965 Rev. I