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Meets IS-95/CDMA2000-1XRTT/WCDMA performance
requirements
General Description
The RMPA1963 Power Amplifier Module (PAM) is Fairchild鈥檚 lat-
est innovation in 50 Ohm matched, surface mount modules tar-
geting US-PCS CDMA/WCDMA/HSDPA and Wireless Local
Loop (WLL) applications. Answering the call for ultra-low DC
power consumption and extended battery life in portable elec-
tronics, the RMPA1963 uses novel proprietary circuitry to dra-
matically reduce amplifier current at low to medium RF output
power levels (< +16 dBm), where the handset most often oper-
ates. A simple two-state Vmode control is all that is needed to
reduce operating current by more than 50% at 16 dBm output
power, and quiescent current (Iccq) by as much as 70% com-
pared to traditional power-saving methods. No additional cir-
cuitry, such as DC-to-DC converters, are required to achieve
this remarkable improvement in amplifier efficiency. Further, the
4x4x1.5 mm LCC package is pin-compatible and a drop-in
replacement for last generation 4x4 mm PAMs widely used
today, minimizing the design time to apply this performance-
enhancing technology. The multi-stage GaAs Microwave Mono-
lithic Integrated Circuit (MMIC) is manufactured using Fairchild
RF鈥檚 InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vcc1
1
RF IN
GND
Vmode
Vref
10
Vcc2
INPUT
MATCH
OUTPUT
MATCH
BIAS/MODE SWITCH
2
3
4
5
9
GND
8
RF OUT
7
GND
6
GND
11 (paddle ground on package bottom)
漏2005 Fairchild Semiconductor Corporation
鈩L-i
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www.fairchildsemi.com
RMPA1963
Rev. H
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RMPA1963
US-PCS CDMA, CDMA2000-1X and WCDMA
Power Amplifier Module
鈩L-i
US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
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