system (PCS) applications. The 2 stage PAM is internally
鈩?/div>
to minimize the use of external
components and features advanced DC power
management to reduce current consumption during peak
phone usage. High power-added efficiency and excellent
linearity are achieved using our InGaP Heterojunction
Bipolar Transistor (HBT) technology.
Features
鈥?Single positive-supply operation and low power and
shutdown modes
鈥?39% CDMA efficiency at +28dBm average output power
鈥?Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry
standard pinout
鈥?Internally matched to 50
鈩?/div>
and DC blocked RF input/
output.
鈥?Meets CDMA2000-1XRTT performance requirements
Device
Absolute Ratings
1
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
T
STG
Parameter
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Min
0
2.6
0
鈥?/div>
-55
Max
5.0
3.5
3.5
+10
+150
Units
V
V
V
dBm
擄C
Note:
1:
No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
漏2004 Fairchild Semiconductor Corporation
RMPA1959 Rev. D
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