RMPA1901-53
PCS CDMA GaAs MMIC
Power Amplifier
Description
PRODUCT INFORMATION
The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance
parameters may be slightly adjusted by 鈥渢weaking鈥?the off-chip matching components. The amplifier circuit design
is a single ended configuration that utilizes harmonic tuning for increased power added efficiency and linearity. The
device uses Raytheon鈥檚 Pseudomorphic High Electron Mobility Transistor (pHEMT) process.
Features
Positive supply voltage of 5.8V, nominal
Efficiency of 34%, typical, for digital CDMA power out of 28.5 dBm
ACPR of 50 dBc, typical, for digital CDMA power out of 28.5 dBm
Small outline metal based quad plastic package
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage
Negative DC Voltage
Simultaneous (Vd-Vg)
RF Input Power (from 50-Ohm source)
Operating Case Temperature
Storage Temperature Range
Thermal Resistance (Channel to case)
Symbol
Vd1,Vd2
Vg1,Vg2
Vdg
PIN
TC
TS
tg
R
jc
Value
+9
-6
+12
+10
-30 to +90
-35 to +110
+18
Units
Volts
Volts
Volts
dBm
擄C
擄C
擄C/W
Electrical
Characteristics
Specifications at
25擄C unless
otherwise noted.
Parameter
Frequency Range
Min
1850
1710
Typ
Max
1910
1785
Unit
MHz
MHz
dB
dB/擄C
dB
Parameter
Harmonics (Po
鈮?/div>
28.5 dBm)
2fo, 3fo, 4fo
Efficiency
Po = 800 mW, Vdd=5.8V
Po = 40 mW, Vdd=5.8V
ACPR (Offset
鈮ぢ?/div>
MHz)
2
Noise Figure (over temp.)
Quiescent Current
Vdd
Vg1/Vg2, Vg3 (<5 mA)
3
Case Operating Temp
Min
Typ
-30
34
5
50
Max
Unit
dBc
%
%
dBc
dB
mA
Volts
Volts
擄C
Gain (Small Signal)
Gain Variation vs Temp
Gain Linearity
(0 dBm
鈮?/div>
Pout
鈮?/div>
28.5 dBm) -1.0
Noise Power
(1930-1990 MHz)
(All Power Levels)
Input VSWR (50鈩?
Stability (All spurious)
1
29
-0.03
+1.0
7.0
80
5.8
-1.5
-30
-0.3
+90
-135 dBm/Hz
2.0:1
---
-70
dBc
Notes:
1. Source/Load VSWR
鈮?/div>
3:1 (All Angles, -50 dBm<Po<28.5 dBm) or Load VSWR
鈮?/div>
20:1 (Out of Band, All Angles, Tc=-40 to +110擄C)
2. Po
鈮?/div>
28.5 dBm at Vdd=5.8V; CDMA Waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30
kHz bandwidth at a 1.25 MHz offset.
3. Vg1=Vg2 and Vg3 adjusted for Quiescent Current of Idq1 & Idq2 = 35 mA, and Idq3 = 45 mA.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised May 14, 1999
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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