RMPA1759 Datasheet

IC型號(hào)：
RMPA1759
PDF描述：
Korean-PCS PowerEdge Power Amplifier Module
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FAIRCHILD

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RMPA1759

September 2004

RMPA1759

Korean-PCS PowerEdge鈩?Power Amplifier Module

General Description

The RMPA1759 power amplifier module (PAM) is designed

for Korean CDMA and CDMA2000-1X personal

communications system (PCS) applications. The 2 stage

PAM is internally matched to 50

鈩?/div>

to minimize the use of

external components and features a low-power mode to

reduce standby current and DC power consumption during

peak phone usage. High power-added efficiency and

excellent linearity are achieved using our InGaP

Heterojunction Bipolar Transistor (HBT) process.

Features

鈥?Single positive-supply operation and low power and

shutdown modes

鈥?38% CDMA efficiency at +28dBm average output power

鈥?Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry

standard pinout

鈥?Internally matched to 50

鈩?/div>

and DC blocked RF input/

output.

鈥?Meets CDMA2000-1XRTT performance requirements

Device

Absolute Ratings

Symbol

Vcc1, Vcc2

Vref

Vmode

STG

Parameter

Supply Voltages

Reference Voltage

Power Control Voltage

RF Input Power

Storage Temperature

Value

5.0

2.6 to 3.5

3.5

+10

-55 to +150

Units

dBm

擄C

Note:

No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

漏2004 Fairchild Semiconductor Corporation

RMPA1759 Rev. C

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