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Alternative pin-out to Fairchild RMPA0965
General Description
The RMPA0967 power amplifier module (PAM) is designed for
cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and
HSDPA applications. The 2 stage PAM is internally matched to
50 Ohms to minimize the use of external components and fea-
tures a low-power mode to reduce standby current and DC
power consumption during peak phone usage. High power-
added efficiency and excellent linearity are achieved using Fair-
child RF鈥檚 InGaP Heterojunction Bipolar Transistor (HBT) pro-
cess.
Device
Functional Block Diagram
(Top View)
MMIC
Vref
1
DC Bias Control
Vmode
2
Input
Match
Output
Match
7
RF OUT
8
GND
RF IN
3
6
GND
Vcc1
4
5
Vcc2
(paddle ground on
package bottom)
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RMPA0967 Rev. E