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RMPA0963 Datasheet

  • RMPA0963

  • Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module

  • 128.41KB

  • 7頁

  • FAIRCHILD

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RMPA0963
PRELIMINARY
April 2005
Features
鈻?/div>
38% CDMA/WCDMA efficiency at +28 dBm Pout
鈻?/div>
14% CDMAA/WCDMA efficiency (80 mA total current) at
+16 dBm Pout
鈻?/div>
Meets HSDPA performance requirements
鈻?/div>
Linear operation in low-power mode up to +19 dBm
鈻?/div>
50% AMPS mode efficiency at +31 dBm Pout
鈻?/div>
Low quiescent current (Iccq): 20 mA in low-power mode
鈻?/div>
Single positive-supply operation with low power and
shutdown modes
鈥?3.4V typical Vcc operation
鈥?Low Vref (2.85V) compatible with advanced handset
chipsets
鈻?/div>
Compact Lead-free compliant LCC package 鈥?/div>
(4.0 X 4.0 x 1.5 mm nominal)
鈻?/div>
Industry standard pinout
鈻?/div>
Internally matched to 50 Ohms and DC blocked RF
input/output
鈻?/div>
Meets IS-95/CDMA2000-1XRTT/WCDMA performance
requirements
General Description
The RMPA0963 Power Amplifier Module (PAM) is Fairchild鈥檚 lat-
est innovation in 50 Ohm matched, surface mount modules tar-
geting Cellular CDMA/WCDMA/HSDPA, AMPS and Wireless
Local Loop (WLL) applications. Answering the call for ultra-low
DC power consumption and extended battery life in portable
electronics, the RMPA0963 uses novel proprietary circuitry to
dramatically reduce amplifier current at low to medium RF out-
put power levels (< +16 dBm), where the handset most often
operates. A simple two-state Vmode control is all that is needed
to reduce operating current by more than 50% at 16 dBm output
power, and quiescent current (Iccq) by as much as 70% com-
pared to traditional power-saving methods. No additional cir-
cuitry, such as DC-to-DC converters, are required to achieve
this remarkable improvement in amplifier efficiency. Further, the
4x4x1.5 mm LCC package is pin-compatible and a drop-in
replacement for last generation 4x4 mm PAMs widely used
today, minimizing the design time to apply this performance-
enhancing technology. The multi-stage GaAs Microwave Mono-
lithic Integrated Circuit (MMIC) is manufactured using Fairchild
RF鈥檚 InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vref 1
Vmode
2
3
4
5
INPUT
MATCH
BIAS/MODE SWITCH
OUTPUT
MATCH
10 GND
9
8
GND
RF OUT
GND
RF IN
Vcc1
7 GND
6
Vcc2
11 (paddle ground on package bottom)
漏2005 Fairchild Semiconductor Corporation
鈩L-i
1
www.fairchildsemi.com
RMPA0963
Rev. E
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o
L
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i
RMPA0963
Cellular CDMA, CDMA2000-1X and WCDMA
Power Amplifier Module
鈩L-i
Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)

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