RMPA0959 Datasheet

IC型號(hào)：
RMPA0959
PDF描述：
CDMA and CDMA2000-1X PowerEdge Power Amplifier Module
文件大?。?/label>
523.69KB
PDF頁數(shù)：
13頁
芯片廠家：
FAIRCHILD

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RMPA0959

October 2004

RMPA0959

CDMA and CDMA2000-1X PowerEdge鈩?Power Amplifier Module

General Description

The RMPA0959 power amplifier module (PAM) is designed

for cellular band AMPS, CDMA and CDMA2000-1X

applications. The 2 stage PAM is internally matched to 50

鈩?/div>

to minimize the use of external components and features a

low-power mode to reduce standby current and DC power

consumption during peak phone usage. High power-added

efficiency and excellent linearity are achieved using our

Heterojunction Bipolar Transistor (HBT) process.

Features

鈥?Single positive-supply operation with low power and

shutdown modes

鈥?39% CDMA efficiency at +28dBm average output power

鈥?53% AMPS mode efficiency at +31dBm output power

鈥?Compact LCC package ( 4.0 X 4.0 x 1.5 mm)

鈥?Internally matched to 50

鈩?/div>

and DC blocked RF input/

output

鈥?Meets CDMA2000-1XRTT performance requirements

Device

Functional Block Diagram

PA MODULE

Vcc1

(5)

COLLECTOR

BIAS 1

GND

(3, 7, 9,10,11)

INTERSTAGE

MATCH

INPUT

MATCHING

NETWORK

OUTPUT

MATCHING

NETWORK

RF IN

(4)

INPUT

STAGE

INPUT STAGE

BIAS

MMIC

OUTPUT

STAGE

OUTPUT STAGE

BIAS

RF OUT

(8)

VCC=3.4V (nom)

VREF=2.85V (nom)

824-849 MHz

50鈩?I/O

Vref

(1)

BIAS CONTROL

COLLECTOR

BIAS 2

Vcc2

(6)

Vmode (2)

漏2004 Fairchild Semiconductor Corporation

RMPA0959 Rev. D

標(biāo)準(zhǔn)包裝
2,500
類別
RF/IF 和 RFID
家庭
RF 放大器
系列
-
頻率
824MHz ~ 849MHz
P1dB
-
增益
25dB ~ 26.5dB
噪音數(shù)據(jù)
4dB
RF 型
手機(jī)，CDMA，CDMA2000，AMPS，IS-95
電源電壓
3 V ~ 4.2 V
電流 - 電源
62mA
測(cè)試頻率
-
封裝/外殼
11-LCC
包裝
帶卷 (TR)
其它名稱
RMPA0959TR

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