RMPA0913C-58
3.5V AMPS/CDMA Power Amplifier
PRODUCT INFORMATION
Description
The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the
824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by 鈥渢weaking鈥?off-chip
matching components. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for
increased power added efficiency and linearity.The device uses Raytheon鈥檚 Pseudomorphic High Electron Mobility
Transistor (pHEMT) process.
Positive supply voltage of 3.5V, nominal
Power Added Efficiency of 56%, typical, at power out of 31.5 dBm
Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm
Small outline metal based quad plastic package
Features
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage
Negative DC Voltage
Simultaneous (Vd-Vg)
RF Input Power (from 50-Ohm source)
Operating Case Temperature (Case)
Storage Temperature Range
Thermal Resistance
Symbol
Vd1,Vd2
Vg1,Vg2
Vdg
P
IN
T
C
T
Stg
RTj-c
Value
+9
-6
+12
+10
-30 to 110
-35 to 110
15
Units
Volts
Volts
Volts
dBm
擄C
擄C
擄C/W
Electrical
Characteristics
(Specifications at
o
25 C operating free
air temperature
unless otherwise
stated)
Parameter
Min
Typ
Max
Unit
MHz
dB
dB/擄C
dB
dBm/Hz
---
dBc
dBc
dBm
Parameter
Efficiency
Pin = 7 dBm, Vdd= 3.5V
Po = 31.5 dBm, Vdd = 3.5V
Po = 28.5 dBm , Vdd= 3.5V
Po = 10 dBm , Vdd= 3.5V
ACPR
2
(Offset
鈮?/div>
鹵 900 kHz)
(Offset
鈮?/div>
鹵 1.98 MHz)
Noise Figure (over temp)
Vdd
Vg1, Vg2 (<4 mA)
3
Case Operating Temp
Min
Typ
62
56
40
1.5
48
63
3.5
Max
Unit
Frequency Range
824
849
Gain (Small Signal)
30
Gain Variation vs Temp
-0.02
Gain Linearity
(0 dBm
鈮?/div>
Pout
鈮?/div>
28.5 dBm) -1.5
+0.0
Noise Power (869-894 MHz)
-140
Input VSWR (50鈩?
2.0:1
1
-70
Stability (All spurious)
Harmonics (Po
鈮?/div>
31.5 dBm)
-35
Power Out
Vdd=3.5V, Pin=7 dBm
32.5
-1.75
-40
%
%
%
%
dBc
dBc
4.5
dB
Volts
-0.25 Volts
+85 擄C
Notes:
1. Source/Load VSWR (All Angles)
鈮?/div>
3:1 In-Band, Load VSWR (All Angles)
鈮?/div>
20:1 Out of Band, Valid over Case Operating Temperature Range.
2. Po
鈮?/div>
28.5 dBm at Vdd=3.5V; CDMA Waveform measured using the ratio of the average power within a 1.23 MHz channel and within a 30
kHz bandwidth at the specified offset.
3. Vg1 adjusted for Idq (stage 1) = 35 mA, Vg2 adjusted for Idq (stage 2) = 155 mA.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 30, 2000
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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